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Graphene: In Situ and Non‐Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All‐Solid‐State Electric Double‐Layer Transistor (Adv. Mater. 7/2014)
Author(s) -
Tsuchiya Takashi,
Terabe Kazuya,
Aono Masakazu
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470045
Subject(s) - materials science , graphene , oxide , transistor , layer (electronics) , nanotechnology , yttria stabilized zirconia , cubic zirconia , optoelectronics , non volatile memory , composite material , ceramic , voltage , electrical engineering , engineering , metallurgy
All‐solid‐state electric double layer transistors using graphene oxide (GO) and yttria stabilized zirconia (YSZ) proton conductors are developed. On page 1087, T. Tsuchiya, and co‐workers report in situ and nonvolatile tuning of sp 2 /sp 3 domain fractions in GO due to a proton‐induced redox reaction at the GO/YSZ interface. The combination of the emerging 2D material and nano‐ionics is a promising approach to derive excellent multifunctionality.