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Photovoltaics: The Complete In‐Gap Electronic Structure of Colloidal Quantum Dot Solids and Its Correlation with Electronic Transport and Photovoltaic Performance (Adv. Mater. 6/2014)
Author(s) -
Katsiev Khabiboulakh,
Ip Alexander H.,
Fischer Armin,
Tanabe Iori,
Zhang Xin,
Kirmani Ahmad R.,
Voznyy Oleksandr,
Rollny Lisa R.,
Chou Kang Wei,
Thon Susanna M.,
Carey Graham H.,
Cui Xiaoyu,
Amassian Aram,
Dowben Peter,
Sargent Edward H.,
Bakr Osman M.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201470034
Subject(s) - photovoltaics , materials science , passivation , quantum dot , optoelectronics , photovoltaic system , colloid , band gap , nanotechnology , limiting , electrical engineering , chemical engineering , mechanical engineering , engineering , layer (electronics)
Surface defects, acting as traps for charge carriers, are a key factor limiting the performance of colloidal quantum dot (CQD) photovoltaics. Revealing the full electronic band structure of PbS CQD devices, subjected to the latest surface passivation treatments, enables a direct correlation of features in the band structure with device performance characteristics, as described by Osman M. Bakr and co‐workers on page 937.