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Post‐treatment‐Free Solution‐Processed Non‐stoichiometric NiO x Nanoparticles for Efficient Hole‐Transport Layers of Organic Optoelectronic Devices
Author(s) -
Jiang Fei,
Choy Wallace C. H.,
Li Xinchen,
Zhang Di,
Cheng Jiaqi
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201405391
Subject(s) - materials science , pedot:pss , non blocking i/o , stoichiometry , nanoparticle , oled , precipitation , solution process , organic solar cell , chemical engineering , optoelectronics , layer (electronics) , nanotechnology , polymer , composite material , organic chemistry , catalysis , chemistry , physics , meteorology , engineering
High‐quality non‐stoichiometric NiO x nanoparticles are synthesized by a facile chemical precipitation method. The NiO x film can function as an effective hole‐transport layer (HTL) without any post‐treatments, while offering wide temperature applicability from room temperature to 150 °C. A high efficiency of 9.16% is achieved in organic solar cells using the NiO x HTL. A better performance in a NiO x ‐based organic light‐emitting diode is observed, compared with a device using PEDOT:PSS.
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