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Controllable n‐Type Doping on CVD‐Grown Single‐ and Double‐Layer Graphene Mixture
Author(s) -
Xu Wentao,
Wang Lihua,
Liu Yiwen,
Thomas Simil,
Seo HongKyu,
Kim KwangIk,
Kim Kwang S.,
Lee TaeWoo
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201405353
Subject(s) - materials science , graphene , doping , layer (electronics) , double layer (biology) , nanotechnology , chemical vapor deposition , chemical engineering , optoelectronics , engineering
n‐Type doping of mixed single‐ and double‐layer graphene grown by chemical vapor deposition (CVD) using decamethylcobaltocene reveals a local‐quasilinear relationship between the work function and the logarithm of the dopant solution concentration. The relationship that arises from bandgap opening is deduced by comparing the relationship between the two factors for single‐ or double‐layer graphene. This work has extensive applicability and practical significance in doping CVD‐grown graphene.