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Performance Potential and Limit of MoS 2 Transistors
Author(s) -
Li Xuefei,
Yang Lingming,
Si Mengwei,
Li Sichao,
Huang Mingqiang,
Ye Peide,
Wu Yanqing
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201405068
Subject(s) - materials science , transistor , optoelectronics , current (fluid) , limit (mathematics) , noise (video) , voltage , detection limit , analytical chemistry (journal) , electrical engineering , mathematical analysis , chemistry , mathematics , chromatography , artificial intelligence , computer science , image (mathematics) , engineering , statistics
High‐performance MoS 2 transistors scaled down to 100 nm are studied at various temperatures down to 20 K, where a highest drive current of 800 μA μm −1 can be achieved. Extremely low electrical noise of 2.8 × 10 −10 μm 2 Hz −1 at 10 Hz is also achieved at room temperature. Furthermore, a negative differential resistance behavior is experimentally observed and its origin of self‐heating is identified using pulsed‐current–voltage measurements.