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Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth
Author(s) -
Loitsch Bernhard,
Rudolph Daniel,
Morkötter Stefanie,
Döblinger Markus,
Grimaldi Gianluca,
Hanschke Lukas,
Matich Sonja,
Parzinger Eric,
Wurstbauer Ursula,
Abstreiter Gerhard,
Finley Jonathan J.,
Koblmüller Gregor
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404900
Subject(s) - nanowire , materials science , quantum dot , luminescence , semiconductor , optoelectronics , nanotechnology , potential well , crystal growth , condensed matter physics , crystallography , physics , chemistry
A unique growth scheme is demonstrated to realize ultrathin GaAs nanowires on Si with sizes down to the sub‐10 nm regime. While this scheme preserves the bulk‐like crystal properties, correlated optical experiments reveal huge blueshifted photoluminescence (up to ≈100 meV) with decreasing nanowire cross‐section, demonstrating very strong quantum confinement effects.