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Controlled Doping of Large‐Area Trilayer MoS 2 with Molecular Reductants and Oxidants
Author(s) -
Tarasov Alexey,
Zhang Siyuan,
Tsai MengYen,
Campbell Philip M.,
Graham Samuel,
Barlow Stephen,
Marder Seth R.,
Vogel Eric M.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404578
Subject(s) - doping , materials science , raman spectroscopy , work function , dipole , photoemission spectroscopy , nanotechnology , optoelectronics , chemical engineering , x ray photoelectron spectroscopy , physics , chemistry , optics , organic chemistry , engineering , layer (electronics)
Highly uniform large‐area MoS 2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work‐function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 10 12 cm −2 .