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Significant Enhancement of Infrared Photodetector Sensitivity Using a Semiconducting Single‐Walled Carbon Nanotube/C 60 Phototransistor
Author(s) -
Park Steve,
Kim Soo Jin,
Nam Ji Hyun,
Pitner Gregory,
Lee Tae Hoon,
Ayzner Alexander L.,
Wang Huiliang,
Fong Scott W.,
Vosgueritchian Michael,
Park Young Jun,
Brongersma Mark L.,
Bao Zhenan
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404544
Subject(s) - responsivity , materials science , photodetector , photoconductivity , carbon nanotube , optoelectronics , infrared , photodiode , sensitivity (control systems) , transistor , response time , nanotechnology , optics , voltage , electronic engineering , electrical engineering , physics , engineering , computer graphics (images) , computer science
A highly sensitive single‐walled carbon nanotube/C 60 ‐based infrared phototransistor is fabricated with a responsivity of 97.5 A W −1 and detectivity of 1.17 × 10 9 Jones at 1 kHz under a source/drain bias of –0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10 4 with a response time of several milliseconds.