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Seamless Stitching of Graphene Domains on Polished Copper (111) Foil
Author(s) -
Nguyen Van Luan,
Shin Bong Gyu,
Duong Dinh Loc,
Kim Sung Tae,
Perello David,
Lim Young Jin,
Yuan Qing Hong,
Ding Feng,
Jeong Hu Young,
Shin Hyeon Suk,
Lee Seung Mi,
Chae Sang Hoon,
Vu Quoc An,
Lee Seung Hee,
Lee Young Hee
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404541
Subject(s) - image stitching , graphene , materials science , foil method , monocrystalline silicon , nanotechnology , scanning tunneling microscope , copper , computer science , optoelectronics , metallurgy , composite material , silicon , artificial intelligence
Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV‐treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.