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High Mobility and Low Density of Trap States in Dual‐Solid‐Gated PbS Nanocrystal Field‐Effect Transistors
Author(s) -
Nugraha Mohamad Insan,
Häusermann Roger,
Bisri Satria Zulkarnaen,
Matsui Hiroyuki,
Sytnyk Mykhailo,
Heiss Wolfgang,
Takeya Jun,
Loi Maria Antonietta
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404495
Subject(s) - nanocrystal , materials science , trap (plumbing) , transistor , dielectric , monolayer , nanotechnology , dual (grammatical number) , field (mathematics) , optoelectronics , physics , quantum mechanics , literature , voltage , meteorology , mathematics , pure mathematics , art
Dual‐gated PbS nanocrystal field‐effect transistors employing SiO 2 and Cytop as gate dielectrics are fabricated. The obtained electron mobility (0.2 cm 2 V −1 s −1 ) and the high on/off ratio (10 5 –10 6 ), show that the controlled nanocrystal assembly (obtained with self‐assembled monolayers), as well as the trap density reduction (using Cytop as dielectric), are crucial steps for the future application of nanocrystals.