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Synergistic Doping of Fullerene Electron Transport Layer and Colloidal Quantum Dot Solids Enhances Solar Cell Performance
Author(s) -
Yuan Mingjian,
Voznyy Oleksandr,
Zhitomirsky David,
Kanjanaboos Pongsakorn,
Sargent Edward H.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404411
Subject(s) - doping , quantum dot , limiting , materials science , fullerene , nanotechnology , optoelectronics , layer (electronics) , electron , computer science , physics , mechanical engineering , engineering , quantum mechanics
The spatial location of the predominant source of performance‐limiting recombination in today's best colloidal quantum dot (CQD) cells is identified, pinpointing the TiO 2 :CQD junction; then, a highly n‐doped PCBM layer is introduced at the CQD:TiO 2 heterointerface. An n‐doped PCBM layer is essential to maintain the depletion region and allow for efficient current extraction, thereby producing a record 8.9% in overall power conversion efficiency.