Giant Photoamplification in Indirect‐Bandgap Multilayer MoS 2  Phototransistors with Local Bottom‐Gate Structures | Zendy

Kwon Junyeon | Zendy; Hong Young Ki | Zendy; Han Gyuchull | Zendy; Omkaram Inturu | Zendy; Choi Woong | Zendy; Kim Sunkook | Zendy; Yoon Youngki | Zendy

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Giant Photoamplification in Indirect‐Bandgap Multilayer MoS 2 Phototransistors with Local Bottom‐Gate Structures

Author(s) -

Kwon Junyeon,

Hong Young Ki,

Han Gyuchull,

Omkaram Inturu,

Choi Woong,

Kim Sunkook,

Yoon Youngki

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201404367

Subject(s) - materials science , band gap , optoelectronics

Local‐gate multilayer MoS 2 phototransistors exhibit a photoresponsivity of up to 342.6 A W −1 , which is higher by 3 orders of magnitude than that of global‐gate multilayer MoS 2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect‐bandgap multilayer MoS 2 phototransistors by optimizing the optoelectronic design.

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