Giant Photoamplification in Indirect‐Bandgap Multilayer MoS 2 Phototransistors with Local Bottom‐Gate Structures
Author(s) -
Kwon Junyeon,
Hong Young Ki,
Han Gyuchull,
Omkaram Inturu,
Choi Woong,
Kim Sunkook,
Yoon Youngki
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404367
Subject(s) - materials science , band gap , optoelectronics
Local‐gate multilayer MoS 2 phototransistors exhibit a photoresponsivity of up to 342.6 A W −1 , which is higher by 3 orders of magnitude than that of global‐gate multilayer MoS 2 phototransistors. These simulations indicate that the gate underlap is critical for the enhancement of the photoresponsivity. These results suggest that high photoresponsivity can be achieved in indirect‐bandgap multilayer MoS 2 phototransistors by optimizing the optoelectronic design.