Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol‐Gel Metal–Oxide Dielectrics and Semiconductors

Incorporation of Zr into an AlO x matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal–oxide devices and circuits with the optimized sol‐gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low‐temperature solution process.