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Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol‐Gel Metal–Oxide Dielectrics and Semiconductors
Author(s) -
Jo JeongWan,
Kim Jaekyun,
Kim KyungTae,
Kang JinGu,
Kim MyungGil,
Kim KwangHo,
Ko Hyungduk,
Kim YongHoon,
Park Sung Kyu
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404296
Subject(s) - materials science , semiconductor , electronics , dielectric , oxide , metal , optoelectronics , nanotechnology , flexible electronics , sol gel , metallurgy , electrical engineering , engineering
Incorporation of Zr into an AlO x matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal–oxide devices and circuits with the optimized sol‐gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low‐temperature solution process.