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High‐Performance and Environmentally Stable Planar Heterojunction Perovskite Solar Cells Based on a Solution‐Processed Copper‐Doped Nickel Oxide Hole‐Transporting Layer
Author(s) -
Kim Jong H.,
Liang PoWei,
Williams Spencer T.,
Cho Namchul,
Chueh ChuChen,
Glaz Micah S.,
Ginger David S.,
Jen Alex K.Y.
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201404189
Subject(s) - materials science , perovskite (structure) , nickel oxide , heterojunction , doping , energy conversion efficiency , optoelectronics , layer (electronics) , nickel , copper oxide , conductivity , oxide , planar , copper , electrical resistivity and conductivity , chemical engineering , nanotechnology , metallurgy , electrical engineering , chemistry , computer graphics (images) , computer science , engineering
An effective approach to significantly increase the electrical conductivity of a NiO x hole‐transporting layer (HTL) to achieve high‐efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu‐doped NiO x HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu‐doped NiO x to larger bandgap perovskites is also demonstrated in this study.