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High‐Gain Subnanowatt Power Consumption Hybrid Complementary Logic Inverter with WSe 2 Nanosheet and ZnO Nanowire Transistors on Glass
Author(s) -
Shokouh Seyed Hossein Hosseini,
Pezeshki Atiye,
Ali Raza Syed Raza,
Lee Hee Sung,
Min SungWook,
Jeon Pyo Jin,
Shin Jae Min,
Im Seongil
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403992
Subject(s) - nanosheet , materials science , inverter , transistor , nanowire , nanotechnology , power (physics) , power consumption , optoelectronics , logic gate , field effect transistor , electrical engineering , voltage , engineering , physics , quantum mechanics
A 1D–2D hybrid complementary logic inverter comprising of ZnO nanowire and WSe 2 nanosheet field‐effect transistors (FETs) is fabricated on glass, which shows excellent static and dynamic electrical performances with a voltage gain of ≈60, sub‐nanowatt power consumption, and at least 1 kHz inverting speed.

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