Single‐Crystal C 60  Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices | Zendy

Chang HsuanChun | Zendy; Lu Chien | Zendy; Liu ChengLiang | Zendy; Chen WenChang | Zendy

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Single‐Crystal C 60 Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices

Author(s) -

Chang HsuanChun,

Lu Chien,

Liu ChengLiang,

Chen WenChang

Publication year - 2015

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201403771

Subject(s) - materials science , ambipolar diffusion , optoelectronics , transistor , non volatile memory , low voltage , nanoparticle , trapping , field effect transistor , threshold voltage , voltage , nanotechnology , electron , electrical engineering , ecology , physics , quantum mechanics , biology , engineering

Low‐voltage organic field‐effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single‐crystal C 60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating‐gate architecture.

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