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Single‐Crystal C 60 Needle/CuPc Nanoparticle Double Floating‐Gate for Low‐Voltage Organic Transistors Based Non‐Volatile Memory Devices
Author(s) -
Chang HsuanChun,
Lu Chien,
Liu ChengLiang,
Chen WenChang
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403771
Subject(s) - materials science , ambipolar diffusion , optoelectronics , transistor , non volatile memory , low voltage , nanoparticle , trapping , field effect transistor , threshold voltage , voltage , nanotechnology , electron , electrical engineering , ecology , physics , quantum mechanics , biology , engineering
Low‐voltage organic field‐effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single‐crystal C 60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating‐gate architecture.