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Transition Between Band and Hopping Transport in Polymer Field‐Effect Transistors
Author(s) -
Yamashita Yu,
Tsurumi Junto,
Hinkel Felix,
Okada Yugo,
Soeda Junshi,
Zajączkowski Wojciech,
Baumgarten Martin,
Pisula Wojciech,
Matsui Hiroyuki,
Müllen Klaus,
Takeya Jun
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403767
Subject(s) - materials science , transistor , acceptor , ionic bonding , polymer , semiconductor , field effect transistor , electron mobility , copolymer , organic field effect transistor , condensed matter physics , optoelectronics , ion , composite material , organic chemistry , electrical engineering , voltage , chemistry , physics , engineering
Hall effect and slightly negative temperature dependence of the mobility in polymeric transistors are demonstrated. The semiconductor channel is based on a polycyclopentadithiophene‐benzothiadiazole (CDT‐BTZ) donor‐acceptor copolymer film whose chain direction is oriented by mechanical compression at the surface of an ionic liquid. The mobility is 5.6 cm 2 V −1 s −1 at room temperature, and is further improved to 6.7 cm 2 V −1 s −1 at 260 K.

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