z-logo
Premium
Transition Between Band and Hopping Transport in Polymer Field‐Effect Transistors
Author(s) -
Yamashita Yu,
Tsurumi Junto,
Hinkel Felix,
Okada Yugo,
Soeda Junshi,
Zajączkowski Wojciech,
Baumgarten Martin,
Pisula Wojciech,
Matsui Hiroyuki,
Müllen Klaus,
Takeya Jun
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403767
Subject(s) - materials science , transistor , acceptor , ionic bonding , polymer , semiconductor , field effect transistor , electron mobility , copolymer , organic field effect transistor , condensed matter physics , optoelectronics , ion , composite material , organic chemistry , electrical engineering , voltage , chemistry , physics , engineering
Hall effect and slightly negative temperature dependence of the mobility in polymeric transistors are demonstrated. The semiconductor channel is based on a polycyclopentadithiophene‐benzothiadiazole (CDT‐BTZ) donor‐acceptor copolymer film whose chain direction is oriented by mechanical compression at the surface of an ionic liquid. The mobility is 5.6 cm 2 V −1 s −1 at room temperature, and is further improved to 6.7 cm 2 V −1 s −1 at 260 K.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom