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Piezotronically Modified Double Schottky Barriers in ZnO Varistors
Author(s) -
Raidl Nadine,
Supancic Peter,
Danzer Robert,
Hofstätter Michael
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403707
Subject(s) - materials science , schottky barrier , schottky diode , varistor , asymmetry , optoelectronics , metal–semiconductor junction , nanotechnology , composite material , electrical engineering , diode , voltage , physics , quantum mechanics , engineering
Double Schottky barriers in ZnO are modified piezotronically by the application of mechanical stresses. New effects such as the enhancement of the potential barrier height and the increase or decrease of the natural barrier asymmetry are presented. Also, an extended model for the piezotronic modification of double Schottky barriers is given.