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Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory
Author(s) -
Lee Daeseok,
Park Jaesung,
Park Jaehyuk,
Woo Jiyong,
Cha Euijun,
Lee Sangheon,
Moon Kibong,
Song Jeonghwan,
Koo Yunmo,
Hwang Hyunsang
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403675
Subject(s) - materials science , resistive random access memory , nanoscopic scale , titanium oxide , optoelectronics , oxide , nanotechnology , titanium , scalability , fast switching , memristor , electronic engineering , electrical engineering , metallurgy , chemical engineering , computer science , voltage , engineering , database
A 3D high‐density switching device is realized utilizing titanium oxide, which is the most optimum material, but which is not practically demonstrated yet. The 1S1R (one ReRAM with the developed switching device) exhibits memory characteristics with a significantly suppressed sneak current, which can be used to realize high‐density ReRAM applications.