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Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
Author(s) -
Guo Nan,
Hu Weida,
Liao Lei,
Yip SenPo,
Ho Johnny C.,
Miao Jinshui,
Zhang Zhi,
Zou Jin,
Jiang Tao,
Wu Shiwei,
Chen Xiaoshuang,
Lu Wei
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403664
Subject(s) - materials science , photodetection , nanowire , photoconductivity , optoelectronics , core (optical fiber) , excited state , conductance , electron , photodetector , condensed matter physics , atomic physics , composite material , physics , quantum mechanics
Core/shell‐like n‐type InAs nanowire phototransistors based on majority‐carrier‐dominated photodetection are investigated. Under optical illumination, electrons generated from the core are excited into the self‐assembled near‐surface photogating layer, forming a built‐in electric field to significantly regulate the core conductance. Anomalous high photoconductive gain and fast response time are obtained at room temperature.