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Mapping Charge‐Carrier Density Across the p–n Junction in Ambipolar Carbon‐Nanotube Networks by Raman Microscopy
Author(s) -
Grimm Stefan B.,
Jakubka Florian,
Schießl Stefan P.,
Gannott Florentina,
Zaumseil Jana
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201403655
Subject(s) - ambipolar diffusion , raman spectroscopy , materials science , transistor , charge carrier , optoelectronics , charge (physics) , nanotechnology , electron , physics , optics , quantum mechanics , voltage
In situ confocal Raman microscopy is used to map the recombination zone (induced p–n junction) in an ambipolar carbon‐nanotube‐network transistor with high spatial resolution. The shift of the 2D mode (G’ mode) depending on hole and electron accumulation serves as a measure for the local charge‐carrier density and provides complementary information about charge transport and recombination in ambipolar transistors.