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A Non‐Doped Phosphorescent Organic Light‐Emitting Device with Above 31% External Quantum Efficiency
Author(s) -
Wang Qi,
Oswald Iain W. H.,
Yang Xiaolong,
Zhou Guijiang,
Jia Huiping,
Qiao Qiquan,
Chen Yonghua,
HoshikawaHalbert Jason,
Gnade Bruce E.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402947
Subject(s) - phosphorescent organic light emitting diode , phosphorescence , materials science , quantum efficiency , doping , common emitter , oled , quantum yield , optoelectronics , diode , quenching (fluorescence) , optics , nanotechnology , fluorescence , physics , layer (electronics)
The demonstrated square‐planar Pt(II)‐complex has reduced triplet‐triplet quenching and therefore a near unity quantum yield in the neat thin film. A non‐doped phosphorescent organic light‐emitting diode (PhOLED) based on this emitter achieves (31.1 ± 0.1)% external quantum efficiency without any out‐coupling, which shows that a non‐doped PhOLED can be comparable in efficiency to the best doped devices with very complicated device structures.