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Band‐Selective Infrared Photodetectors with Complete‐Composition‐Range InAs x P 1‐ x Alloy Nanowires
Author(s) -
Ren Pinyun,
Hu Wei,
Zhang Qinglin,
Zhu Xiaoli,
Zhuang Xiujuan,
Ma Liang,
Fan Xiaopeng,
Zhou Hong,
Liao Lei,
Duan Xiangfeng,
Pan Anlian
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402945
Subject(s) - materials science , photodetector , nanowire , infrared , alloy , composition (language) , optoelectronics , wavelength , analytical chemistry (journal) , optics , metallurgy , linguistics , philosophy , physics , chemistry , chromatography
Band‐selective infrared photodetectors (PDs) are constructed with InAs x P 1‐ x alloy nanowires from the complete composition range (0 ≤ x ≤ 1) achieved by a new growth route combining the vapor–liquid–solid mechanism with an additional ion‐exchange process. Increasing the composition x value from 0 to 1 in the PDs allows the peak response wavelength to be gradually tuned from ca. 900 to ca. 2900 nm.