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Self‐Assembled Monolayers of Cyclohexyl‐Terminated Phosphonic Acids as a General Dielectric Surface for High‐Performance Organic Thin‐Film Transistors
Author(s) -
Liu Danqing,
He Zikai,
Su Yaorong,
Diao Ying,
Mannsfeld Stefan C. B.,
Bao Zhenan,
Xu Jianbin,
Miao Qian
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402822
Subject(s) - monolayer , materials science , dielectric , transistor , thin film transistor , self assembled monolayer , optoelectronics , semiconductor , organic field effect transistor , organic semiconductor , thin film , electron mobility , nanotechnology , field effect transistor , layer (electronics) , voltage , electrical engineering , engineering
A novel self‐assembled monolayer (SAM) on AlO y /TiO x is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM‐modified AlO y /TiO x functions as a general dielectric, enabling organic thin‐film transistors with a field‐effect mobility higher than 5 cm 2 V −1 s −1 for both holes and electrons, good air stability with low operating voltage, and general applicability to solution‐processed and vacuum‐deposited n‐type and p‐type organic semiconductors.