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Spintronic Functionality of BiFeO 3 Domain Walls
Author(s) -
Lee Ji Hye,
Fina Ignasi,
Marti Xavi,
Kim Young Heon,
Hesse Dietrich,
Alexe Marin
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402558
Subject(s) - spintronics , materials science , magnetoresistance , ferromagnetism , domain wall (magnetism) , ferroelectricity , condensed matter physics , realization (probability) , domain (mathematical analysis) , anisotropy , optoelectronics , magnetic field , physics , optics , magnetization , mathematical analysis , statistics , mathematics , quantum mechanics , dielectric
Anisotropic magnetoresistance at the BiFeO 3 domain walls has been observed thanks to the realization of micro‐devices that allow the direct magneto‐transport characterization of the domain‐walls. Anisotropic magnetoresistance of ferromagnetic metals has been a pillar in spintronic technology, and now it is evidenced at the conductive domain walls of an insulating ferroelectric material, which implies that domain walls become an electrically tunable nanospintronic object.