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An Epitaxial Ferroelectric Tunnel Junction on Silicon
Author(s) -
Li Zhipeng,
Guo Xiao,
Lu HuiBin,
Zhang Zaoli,
Song Dongsheng,
Cheng Shaobo,
Bosman Michel,
Zhu Jing,
Dong Zhili,
Zhu Weiguang
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402527
Subject(s) - ferroelectricity , epitaxy , materials science , silicon , optoelectronics , quantum tunnelling , polarization (electrochemistry) , tunnel junction , nanotechnology , layer (electronics) , engineering physics , engineering , chemistry , dielectric
Epitaxially grown functional perovskites on silicon (001) and the ferroelectricity of a 3.2 nm thick BaTiO 3 barrier layer are demonstrated. The polarization‐switching‐induced change in tunneling resistance is measured to be two orders of magnitude. The obtained results suggest the possibility of integrating ferroelectric tunnel junctions as binary data storage media in non‐volatile memory cells on a silicon platform.