Premium
High Efficiency Cu 2 ZnSn(S,Se) 4 Solar Cells by Applying a Double In 2 S 3 /CdS Emitter
Author(s) -
Kim Jeehwan,
Hiroi Homare,
Todorov Teodor K.,
Gunawan Oki,
Kuwahara Masaru,
Gokmen Tayfun,
Nair Dhruv,
Hopstaken Marinus,
Shin Byungha,
Lee Yun Seog,
Wang Wei,
Sugimoto Hiroki,
Mitzi David B.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402373
Subject(s) - open circuit voltage , common emitter , materials science , optoelectronics , short circuit , solar cell , doping , voltage , engineering physics , nanotechnology , electrical engineering , physics , engineering
High‐efficiency Cu 2 ZnSn(S,Se) 4 solar cells are reported by applying In 2 S 3 /CdS double emitters. This new structure offers a high doping concentration within the Cu 2 ZnSn(S,Se) 4 solar cells, resulting in a substantial enhancement in open‐circuit voltage. The 12.4% device is obtained with a record open‐circuit voltage deficit of 593 mV.