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Observations of a Metal–Insulator Transition and Strong Surface States in Bi 2– x Sb x Se 3 Thin Films
Author(s) -
Zhang Cheng,
Yuan Xiang,
Wang Kai,
Chen ZhiGang,
Cao Baobao,
Wang Weiyi,
Liu Yanwen,
Zou Jin,
Xiu Faxian
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402299
Subject(s) - topological insulator , materials science , molecular beam epitaxy , surface states , metal–insulator transition , thin film , condensed matter physics , insulator (electricity) , metal , transition metal , conduction band , surface (topology) , epitaxy , optoelectronics , nanotechnology , physics , electron , metallurgy , quantum mechanics , catalysis , geometry , biochemistry , chemistry , mathematics , layer (electronics)
High‐quality thin films of the topological insulator Bi 2– x Sb x Se 3 are grown by molecular beam epitaxy. A metal–insulator transition along with strong surface states — revealed by Shubnikov–de Haas oscillations — is observed as the Sb concentration is increased. This system represents a widely tunable platform for achieving high surface conduction, suppressing the bulk influence, and manipulating the band structure of topological insulators.