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Interface Engineering for High‐Performance Top‐Gated MoS 2 Field‐Effect Transistors
Author(s) -
Zou Xuming,
Wang Jingli,
Chiu ChungHua,
Wu Yun,
Xiao Xiangheng,
Jiang Changzhong,
Wu WenWei,
Mai Liqiang,
Chen Tangsheng,
Li Jinchai,
Ho Johnny C.,
Liao Lei
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201402008
Subject(s) - materials science , transistor , interface (matter) , field effect transistor , optoelectronics , saturation (graph theory) , stack (abstract data type) , nanotechnology , engineering physics , electrical engineering , composite material , computer science , voltage , engineering , mathematics , capillary number , combinatorics , capillary action , programming language
Experimental evidence of the optimized interface engineering effects in MoS 2 transistors is demonstrated. The MoS 2 /Y 2 O 3 /HfO 2 stack offers excellent interface control. Results show that HfO 2 layer can be scaled down to 9 nm, yet achieving a near‐ideal sub‐threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS 2 transistor reported to date.