Interface Engineering for High‐Performance Top‐Gated MoS 2  Field‐Effect Transistors | Zendy

Zou Xuming | Zendy; Wang Jingli | Zendy; Chiu ChungHua | Zendy; Wu Yun | Zendy; Xiao Xiangheng | Zendy; Jiang Changzhong | Zendy; Wu WenWei | Zendy; Mai Liqiang | Zendy; Chen Tangsheng | Zendy; Li Jinchai | Zendy; Ho Johnny C. | Zendy; Liao Lei | Zendy

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Interface Engineering for High‐Performance Top‐Gated MoS 2 Field‐Effect Transistors

Author(s) -

Zou Xuming,

Wang Jingli,

Chiu ChungHua,

Wu Yun,

Xiao Xiangheng,

Jiang Changzhong,

Wu WenWei,

Mai Liqiang,

Chen Tangsheng,

Li Jinchai,

Ho Johnny C.,

Liao Lei

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201402008

Subject(s) - materials science , transistor , interface (matter) , field effect transistor , optoelectronics , saturation (graph theory) , stack (abstract data type) , nanotechnology , engineering physics , electrical engineering , composite material , computer science , voltage , engineering , mathematics , capillary number , combinatorics , capillary action , programming language

Experimental evidence of the optimized interface engineering effects in MoS 2 transistors is demonstrated. The MoS 2 /Y 2 O 3 /HfO 2 stack offers excellent interface control. Results show that HfO 2 layer can be scaled down to 9 nm, yet achieving a near‐ideal sub‐threshold slope (65 mv/dec) and the highest saturation current (526 μA/μm) of any MoS 2 transistor reported to date.

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