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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects
Author(s) -
Jeon Sanghun,
Song Ihun,
Lee Sungsik,
Ryu Byungki,
Ahn SeungEon,
Lee Eunha,
Kim Young,
Nathan Arokia,
Robertson John,
Chung UIn
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401955
Subject(s) - materials science , optoelectronics , photodetector , heterojunction , interconnection , transmittance , photodiode , nanocrystalline material , photoresistor , photoconductivity , visible spectrum , semiconductor , image sensor , optics , nanotechnology , computer network , physics , computer science
A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin‐film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible‐light wavelengths. The phototransistor is a Hf–In–Zn–O/In–Zn–O heterostructure yielding a high quantum‐efficiency in the visible range.