Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects | Zendy

Jeon Sanghun | Zendy; Song Ihun | Zendy; Lee Sungsik | Zendy; Ryu Byungki | Zendy; Ahn SeungEon | Zendy; Lee Eunha | Zendy; Kim Young | Zendy; Nathan Arokia | Zendy; Robertson John | Zendy; Chung UIn | Zendy

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Origin of High Photoconductive Gain in Fully Transparent Heterojunction Nanocrystalline Oxide Image Sensors and Interconnects

Author(s) -

Jeon Sanghun,

Song Ihun,

Lee Sungsik,

Ryu Byungki,

Ahn SeungEon,

Lee Eunha,

Kim Young,

Nathan Arokia,

Robertson John,

Chung UIn

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201401955

Subject(s) - materials science , optoelectronics , photodetector , heterojunction , interconnection , transmittance , photodiode , nanocrystalline material , photoresistor , photoconductivity , visible spectrum , semiconductor , image sensor , optics , nanotechnology , computer network , physics , computer science

A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin‐film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible‐light wavelengths. The phototransistor is a Hf–In–Zn–O/In–Zn–O heterostructure yielding a high quantum‐efficiency in the visible range.

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