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High‐Efficiency Nanostructured Silicon Solar Cells on a Large Scale Realized Through the Suppression of Recombination Channels
Author(s) -
Zhong Sihua,
Huang Zengguang,
Lin Xingxing,
Zeng Yang,
Ma Yechi,
Shen Wenzhong
Publication year - 2015
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401553
Subject(s) - materials science , passivation , photovoltaics , silicon , nanostructure , optoelectronics , nanotechnology , doping , solar cell , common emitter , engineering physics , photovoltaic system , electrical engineering , layer (electronics) , engineering
Nanostructured silicon solar cells show great potential for new‐generation photovoltaics due to their ability to approach ideal light‐trapping. However, the nanofeatured morphology that brings about the optical benefits also introduces new recombination channels, and severe deterioration in the electrical performance even outweighs the gain in optics in most attempts. This Research News article aims to review the recent progress in the suppression of carrier recombination in silicon nanostructures, with the emphasis on the optimization of surface morphology and controllable nanostructure height and emitter doping concentration, as well as application of dielectric passivation coatings, providing design rules to realize high‐efficiency nanostructured silicon solar cells on a large scale.