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Charge‐Trap Flash‐Memory Oxide Transistors Enabled by Copper–Zirconia Composites
Author(s) -
Baeg KangJun,
Kim MyungGil,
Song Charles K.,
Yu Xinge,
Facchetti Antonio,
Marks Tobin J.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401354
Subject(s) - materials science , oxide , transistor , cubic zirconia , thin film transistor , copper , indium , layer (electronics) , flash (photography) , trap (plumbing) , flash memory , optoelectronics , non volatile memory , zirconium , composite material , metallurgy , electrical engineering , art , ceramic , visual arts , voltage , computer science , engineering , operating system , environmental engineering
A solution‐processed electrochemical charge‐trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu‐ZrO 2 ) as a charge‐trapping layer. Because of the facile reduction of Cu 2+ to Cu 1+ , Cu‐ZrO 2 thin films are especially effective in memory devices based on thin‐film transistors when the devices are fabricated from combustion‐processed metal–oxide semiconductors (In 2 O 3 and an indium–gallium oxide).
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