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Sign Control of Magnetoresistance Through Chemically Engineered Interfaces
Author(s) -
Ciudad David,
Gobbi Marco,
Kinane Christy J.,
Eich Marius,
Moodera Jagadeesh S.,
Hueso Luis E.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401283
Subject(s) - materials science , magnetoresistance , spintronics , ferromagnetism , sign (mathematics) , lithium (medication) , nanotechnology , tunnel magnetoresistance , condensed matter physics , magnetic field , layer (electronics) , medicine , mathematical analysis , physics , mathematics , endocrinology , quantum mechanics
Chemically engineered interfaces are shown to produce inversions of the magnetoresistance in spintronic devices including lithium fluoride interlayers. This behavior is explained by the formation of anti‐ferromagnetic difluoride layers. By changing the order of deposition of the different materials, the sign of the magnetoresistance can be deterministically controlled both in organic spin valves and in inorganic magnetic tunnel junctions.