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p‐i‐n Heterojunction Solar Cells with a Colloidal Quantum‐Dot Absorber Layer
Author(s) -
Ko DongKyun,
Brown Patrick R.,
Bawendi Moungi G.,
Bulović Vladimir
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401250
Subject(s) - quantum dot , heterojunction , materials science , optoelectronics , layer (electronics) , absorption (acoustics) , solar cell , nanotechnology , composite material
A quantum‐dot (QD) p‐i‐n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short‐circuit current is achieved compared with that of conventional ZnO/QD devices.
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