Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells | Zendy

Lee Yun Seog | Zendy; Chua Danny | Zendy; Brandt Riley E. | Zendy; Siah Sin Cheng | Zendy; Li Jian V. | Zendy; Mailoa Jonathan P. | Zendy; Lee Sang Woon | Zendy; Gordon Roy G. | Zendy; Buonassisi Tonio | Zendy

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Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells

Author(s) -

Lee Yun Seog,

Chua Danny,

Brandt Riley E.,

Siah Sin Cheng,

Li Jian V.,

Mailoa Jonathan P.,

Lee Sang Woon,

Gordon Roy G.,

Buonassisi Tonio

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201401054

Subject(s) - materials science , layer (electronics) , oxide , open circuit voltage , energy conversion efficiency , optoelectronics , atomic layer deposition , gallium , nanotechnology , voltage , electrical engineering , metallurgy , engineering

The power conversion efficiency of solar cells based on copper (I) oxide (Cu 2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga 2 O 3 ) layer. By improving band‐alignment and passivating interface defects, the device exhibits an open‐circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.

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