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Atomic Layer Deposited Gallium Oxide Buffer Layer Enables 1.2 V Open‐Circuit Voltage in Cuprous Oxide Solar Cells
Author(s) -
Lee Yun Seog,
Chua Danny,
Brandt Riley E.,
Siah Sin Cheng,
Li Jian V.,
Mailoa Jonathan P.,
Lee Sang Woon,
Gordon Roy G.,
Buonassisi Tonio
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201401054
Subject(s) - materials science , layer (electronics) , oxide , open circuit voltage , energy conversion efficiency , optoelectronics , atomic layer deposition , gallium , nanotechnology , voltage , electrical engineering , metallurgy , engineering
The power conversion efficiency of solar cells based on copper (I) oxide (Cu 2 O) is enhanced by atomic layer deposition of a thin gallium oxide (Ga 2 O 3 ) layer. By improving band‐alignment and passivating interface defects, the device exhibits an open‐circuit voltage of 1.20 V and an efficiency of 3.97%, showing potential of over 7% efficiency.