Premium
All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors
Author(s) -
Muhieddine Khalid,
Ullah Mujeeb,
Pal Bhola N.,
Burn Paul,
Namdas Ebinazar B.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400938
Subject(s) - materials science , bilayer , optoelectronics , transistor , layer (electronics) , field effect transistor , nanotechnology , membrane , electrical engineering , engineering , genetics , voltage , biology
All solution‐processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.