Premium
Nanosecond Intersystem Crossing Times in Fullerene Acceptors: Implications for Organic Photovoltaic Diodes
Author(s) -
Chow Philip C. Y.,
AlbertSeifried Sebastian,
Gélinas Simon,
Friend Richard H.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400846
Subject(s) - intersystem crossing , fullerene , nanosecond , exciton , materials science , organic solar cell , photochemistry , singlet state , diode , singlet fission , chemical physics , optoelectronics , atomic physics , chemistry , excited state , physics , polymer , optics , organic chemistry , condensed matter physics , laser , composite material
Triplet‐exciton formation through intersystem crossing of photogenerated singlet excitons in fullerene acceptors can compete with charge generation in organic photovoltaic diodes. This article reports the intersystem crossing timescale (τ ISC ) of the most commonly used fullerene acceptors, PC 60 BM and PC 70 BM, in solutions and in spin‐coated films. These times are on the nanosecond timescale, and are longer than the characteristic times for charge generation (τ d ).