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Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films
Author(s) -
Lee Daesu,
Jeon Byung Chul,
Yoon Aram,
Shin Yeong Jae,
Lee Myang Hwan,
Song Tae Kwon,
Bu Sang Don,
Kim Miyoung,
Chung JinSeok,
Yoon JongGul,
Noh Tae Won
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400654
Subject(s) - flexoelectricity , materials science , ferroelectricity , thin film , epitaxy , electric field , nanotechnology , optoelectronics , condensed matter physics , dielectric , physics , layer (electronics) , quantum mechanics
Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO 3 thin films. An intriguing, so far never demonstrated, effect of internal electric field ( E int ) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function.
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