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Electric Field Manipulation of Magnetization Rotation and Tunneling Magnetoresistance of Magnetic Tunnel Junctions at Room Temperature
Author(s) -
Li Peisen,
Chen Aitian,
Li Dalai,
Zhao Yonggang,
Zhang Sen,
Yang Lifeng,
Liu Yan,
Zhu Meihong,
Zhang Huiyun,
Han Xiufeng
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400617
Subject(s) - spintronics , magnetoresistance , quantum tunnelling , condensed matter physics , materials science , magnetization , tunnel magnetoresistance , electric field , rotation (mathematics) , field (mathematics) , engineering physics , magnetic field , nanotechnology , ferromagnetism , computer science , optoelectronics , physics , quantum mechanics , mathematics , artificial intelligence , pure mathematics
Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is considered as the milestone of ultralow power spintronic devices. Here, reversible, continuous magnetization rotation and manipulation is reported for TMR at room temperature in CoFeB/AlO x /CoFeB/piezoelectric structure by electric fields without the assistance of a magnetic field through strain‐mediated interaction. These results provide a new way of exploring electric‐field‐controlled spintronics.