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Highly Stable Carbon Nanotube Top‐Gate Transistors with Tunable Threshold Voltage
Author(s) -
Wang Huiliang,
Cobb Brian,
van Breemen Albert,
Gelinck Gerwin,
Bao Zhenan
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400540
Subject(s) - ambipolar diffusion , materials science , transistor , carbon nanotube , threshold voltage , hysteresis , optoelectronics , dielectric , thin film transistor , nanotechnology , gate dielectric , voltage , electrical engineering , condensed matter physics , physics , electron , quantum mechanics , layer (electronics) , engineering
Carbon‐nanotube top‐gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias‐stress stability under ambient conditions. Ambipolar single‐walled carbon nanotube (SWNT) transistors are observed when P(VDF‐TrFE‐CTFE) is utilized as a topgate dielectric. Furthermore, continuous tuning of the threshold voltages of both unipolar and ambipolar SWNT thin‐film transistors (TFTs) is demonstrated for the first time.