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Boost Up Mobility of Solution‐Processed Metal Oxide Thin‐Film Transistors via Confining Structure on Electron Pathways
Author(s) -
Rim You Seung,
Chen Huajun,
Kou Xiaolu,
Duan HsinSheng,
Zhou Huanping,
Cai Min,
Kim Hyun Jae,
Yang Yang
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400529
Subject(s) - materials science , thin film transistor , transistor , optoelectronics , solution process , threshold voltage , amorphous solid , electron mobility , oxide , semiconductor , layer (electronics) , oxide thin film transistor , voltage , metal , electron , induced high electron mobility transistor , nanotechnology , field effect transistor , electrical engineering , metallurgy , crystallography , chemistry , physics , engineering , quantum mechanics
Novel structure‐engineered amorphous oxide semiconductor thin‐film transistors using a solution process to overcome the trade‐off between high mobility and other parameters (i.e., on/off ratio, sub‐threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure‐engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra‐high density and high electron mobility.
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