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Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element
Author(s) -
Yang Yuchao,
Lee Jihang,
Lee Seunghyun,
Liu CheHung,
Zhong Zhaohui,
Lu Wei
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400270
Subject(s) - graphene , materials science , resistive random access memory , oxide , resistive touchscreen , resistor , fabrication , optoelectronics , nanotechnology , electrode , insulator (electricity) , surface modification , electrical engineering , voltage , chemical engineering , metallurgy , medicine , chemistry , alternative medicine , engineering , pathology
A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator‐metal transition‐like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built‐in selector and leading to a desirable highly nonlinear on‐state behavior of the oxide resistive memory.