Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element | Zendy

Yang Yuchao | Zendy; Lee Jihang | Zendy; Lee Seunghyun | Zendy; Liu CheHung | Zendy; Zhong Zhaohui | Zendy; Lu Wei | Zendy

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Oxide Resistive Memory with Functionalized Graphene as Built‐in Selector Element

Author(s) -

Yang Yuchao,

Lee Jihang,

Lee Seunghyun,

Liu CheHung,

Zhong Zhaohui,

Lu Wei

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201400270

Subject(s) - graphene , materials science , resistive random access memory , oxide , resistive touchscreen , resistor , fabrication , optoelectronics , nanotechnology , electrode , insulator (electricity) , surface modification , electrical engineering , voltage , chemical engineering , metallurgy , medicine , chemistry , alternative medicine , engineering , pathology

A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator‐metal transition‐like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built‐in selector and leading to a desirable highly nonlinear on‐state behavior of the oxide resistive memory.

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