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Enhancement of Ferroelectric Curie Temperature in BaTiO 3 Films via Strain‐Induced Defect Dipole Alignment
Author(s) -
Damodaran Anoop R.,
Breckenfeld Eric,
Chen Zuhuang,
Lee Sungki,
Martin Lane W.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400254
Subject(s) - materials science , curie temperature , ferroelectricity , epitaxy , dipole , condensed matter physics , strain engineering , strain (injury) , thin film , optoelectronics , dielectric , nanotechnology , silicon , ferromagnetism , medicine , physics , layer (electronics) , chemistry , organic chemistry
The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO 3 to >800 °C. Advances in thin‐film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.