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Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories
Author(s) -
Tian Xuezeng,
Yang Shize,
Zeng Min,
Wang Lifen,
Wei Jiake,
Xu Zhi,
Wang Wenlong,
Bai Xuedong
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201400127
Subject(s) - mechanism (biology) , materials science , resistive touchscreen , mass transfer , information transfer , electrical conductor , process (computing) , nanotechnology , resistive random access memory , electrochemistry , optoelectronics , computer science , engineering physics , electrical engineering , electrode , telecommunications , physics , voltage , composite material , engineering , mechanics , chemistry , quantum mechanics , operating system
Getting a grip on the switching mechanism in nanoionic resistive memories: the bipolar electrochemical mechanism for mass transfer of Ag in nanoscale SiO 2 is disclosed. The in‐situ atomic‐level experiments provide detailed evidence of the mass‐transfer process under external electric fields. The mass transfer of Ag directly leads to conductive filament formation and disruption, which is responsible for the switching mechanism in nanoionic resistive memories.