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Nanoscale Materials: A General Approach for Fast Detection of Charge Carrier Type and Conductivity Difference in Nanoscale Materials (Adv. Mater. 48/2013)
Author(s) -
Jiang Lili,
Wu Bin,
Liu Hongtao,
Huang Yuan,
Chen Jianyi,
Geng Dechao,
Gao Hongjun,
Liu Yunqi
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370300
Subject(s) - materials science , graphene , nanoscopic scale , doping , biasing , semiconductor , conductivity , nanotechnology , polarization (electrochemistry) , optoelectronics , voltage , electrical engineering , chemistry , engineering
By using tapping‐mode AFM with a biased tip, the type of material (e.g.,metallic, n‐, or p‐type semiconductor) can be distinguished. Taking p‐doping of graphene as an example, Y. Q. Liu, H. J. Gao and co‐workers, on page 7015, observe a series of false apparent heights of graphene flakes when applying a series of different voltages on the tip. However, the heights under negative bias are higher than those under positive bias at the same value. This is caused by an asymmetric polarization effect, which is related to the p‐doping nature of graphene.