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Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning (Adv. Mater. 32/2013)
Author(s) -
Marzegalli Anna,
Isa Fabio,
Groiss Heiko,
Müller Elisabeth,
Falub Claudiu V.,
Taboada Alfonso G.,
Niedermann Philippe,
Isella Giovanni,
Schäffler Friedrich,
Montalenti Francesco,
von Känel Hans,
Miglio Leo
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370204
Subject(s) - materials science , dislocation , silicon , substrate (aquarium) , germanium , optoelectronics , dominance (genetics) , nanotechnology , crystallography , engineering physics , composite material , biochemistry , chemistry , gene , oceanography , engineering , geology
An innovative strategy in dislocation analysis is described by Anna Marzegalli et al. on page 4408 demonstrating that vertical dislocations dominate in thick Ge layers on silicon substrates.