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Structural and Optoelectronic Characterization of RF Sputtered ZnSnN 2 (Adv. Mater. 18/2013)
Author(s) -
Lahourcade Lise,
Coronel Naomi C.,
Delaney Kris T.,
Shukla Sujeet K.,
Spaldin Nicola A.,
Atwater Harry A.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370120
Subject(s) - materials science , semiconductor , photovoltaics , characterization (materials science) , optoelectronics , thin film , nanotechnology , band gap , realization (probability) , photovoltaic system , electrical engineering , statistics , mathematics , engineering
The development of earth‐abundant semiconductors is an important step in working towards the realization of photovoltaic production on a global scale. On page 2562 , Harry A. Atwater and co‐workers successfully synthesize stoichiometric ZnSnN 2 , a new earth‐abundant semiconductor material, which has a theoretical direct band gap of 1.42 eV, making it well suited for potential applications in thin film photovoltaics.