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Thin Film Transistors: Dual Channel Operation Upon n‐Channel Percolation in a Pentacene‐C 60 Ambipolar Organic Thin Film Transistor (Adv. Mater. 15/2013)
Author(s) -
Noever Simon J.,
Fischer Stefan,
Nickel Bert
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370093
Subject(s) - pentacene , materials science , ambipolar diffusion , transistor , organic field effect transistor , optoelectronics , percolation (cognitive psychology) , thin film transistor , fullerene , nanotechnology , heterojunction , field effect transistor , layer (electronics) , electrical engineering , voltage , physics , engineering , quantum mechanics , neuroscience , biology , plasma
Bert Nickel and co‐workers report on page 2147 an in‐situ characterization of the evolution of a pentacene‐fullerene ambipolar transistor. The experiment highlights the importance of film percolation for interface charging in organic heterojunctions. The cover picture visualizes the pentacene/C60 transistor geometry during fullerene deposition, including topological and structural information obtained via AFM and X‐ray investigations. Image: Christoph Hohmann, Nanosystems Initiative Munich.