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Semiconductors: Evolutionary Selection Growth: Towards Template‐Insensitive Preparation of Single‐Crystal Layers (Adv. Mater. 9/2013)
Author(s) -
Leung Benjamin,
Song Jie,
Zhang Yu,
Han Jung
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370054
Subject(s) - materials science , semiconductor , chemical vapor deposition , nanotechnology , optoelectronics , template , compound semiconductor , organic semiconductor , amorphous solid , single crystal , crystal (programming language) , layer (electronics) , crystallography , epitaxy , computer science , chemistry , programming language
A method in which single‐crystalline functional semiconductor material can be grown on amorphous surfaces is described by Jie Song and co‐workers on page 1285 . Selectively defined layers of GaN are grown by metal‐organic chemical vapor deposition on SiO 2 /Si(100) substrates utilizing the evolutionary selection of grains, enabling the formation of semiconductor crystals suitable for use in electronic and optoelectronic devices. The inside cover depicts possible device‐scale integration, enabling high performance circuits utilizing compound semiconductors and Si CMOS. Cover image by Cindy Lau, scientific illustrator.