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Organic Field‐Effect Transistors: Remarkable Mobility Increase and Threshold Voltage Reduction in Organic Field‐Effect Transistors by Overlaying Discontinuous Nano‐Patches of Charge‐Transfer Doping Layer on Top of Semiconducting Film (Adv. Mater. 5/2013)
Author(s) -
Kim Jong H.,
Yun Sun Woo,
An ByeongKwan,
Han Yoon Deok,
Yoon SeongJun,
Joo Jinsoo,
Park Soo Young
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370028
Subject(s) - materials science , pentacene , doping , threshold voltage , optoelectronics , transistor , field effect transistor , organic semiconductor , semiconductor , voltage , electron mobility , charge (physics) , layer (electronics) , organic field effect transistor , nanotechnology , thin film transistor , electrical engineering , engineering , physics , quantum mechanics
Soo Young Park and co‐workers demonstrate on page 719 an effective strategy for implementing discontinuous nanopatches on top of an organic semiconductor, leading to significantly enhanced field‐effect mobility with simultaneous reduction of threshold voltages of organic transistors. Mobility and threshold voltage of p‐type pentacene are remarkably improved to 4.52 cm 2 V −1 s −1 and −0.4 V, and those of n‐type Hex‐4‐TFPTA are also improved to 2.57 cm 2 V −1 s −1 and 4.1 V by overlaying the several nanometer‐thick nanopatches of charge‐transfer doping layer. The interfacial charge‐transfer doping decreases the density of trap states in the organic semiconductor, generating desirable transistor performances.